Technology for Nitrogen-Polar Gallium Nitride: Epiwafers & Substrates (ECLIPSE)

S²MARTS Project No. 22-06

Innovator NETWORX: 11 August 2022 at 1:00 PM ET

Coming Soon Notice Rev1: 4 August 2022 at 9:00 AM ET

Coming Soon Notice: 27 July 2022 at 2:00 PM ET


Thursday, 11 August 2022

1:00 PM – 2:00 PM ET

During this virtual teaming event, members have 5 – 7 minutes to present their capabilities. You can take this time to introduce your organization and meet others who complement your capabilities.

We highly encourage you to ask questions and build your team for this project!

After the event, you’ll find the slides and recording on NSTXL Community. If you haven’t already joined, click here to create your account.


The Coming Soon Notice has been revised to include an update on security requirements. If you plan to submit a solution for this opportunity, your organization must be certified through the Joint Certification Program.

You must submit a DD Form 2345 through the Joint Certification Program in order to view the future RFS and to submit a proposal.

Click here to learn the benefits of the DD Form 2345 – and instructions on how to submit yours!

Coming Soon Notice Rev1: S2MARTS 2206 ECLIPSE Coming Soon 08 02 2022 R161


The Office of the Undersecretary of Defense, Research & Engineering (OUSD(R&E))’s Trusted & Assured Microelectronics program is seeking prototypes that (1) mature the manufacturing of 100mm and 150mm N-Polar GaN epiwafers and off-axis semi-insulating SiC substrates, (2) capture foundry requirements for N-Polar GaN transistors and inform N-Polar GaN material maturation specifications, and (3) author and begin execution of N-Polar transistor and MMIC maturation plans. Key program objectives are as follows: (1) ensure repeatability and reproducibility, (2) understand and improve yield, and (3) exercise N-Polar GaN supply chain segments for substrates, epiwafers, and device fabrication.

State-of-the-art (SOTA) radio frequency (RF) material is a key technological enabler for millimeter wave (mmW) applications, such as fifth generation (5G) communications, satellite communications (satcom), electronic warfare (EW), and radio detection and ranging (radar). In order to maintain leadership in RF microelectronics, the United States (US) Department of Defense (DoD) and Defense Industrial Base (DIB) requires access to mature domestic sources of superior semiconductor materials. The following are examples emerging high frequency RF requirements:

  • 5G commercial platforms require high-band frequencies (e.g., 26, 28, 40, 50, and 66 GHz) to service areas with very high traffic density and extreme peak data rates.
  • SATCOM requires Ku-Band (12 to 18 GHz) through Ka-Band (26.5 to 40GHz) frequencies to support of high throughput satellites and very small aperture terminals. Very high throughput satellite communication systems have much higher frequency requirements within V-, E-, and W-Bands.
  • EW and RADAR platforms need to address today’s threats in X-Band (8 to 12GHz) through Ka-Band (26.5 to 40GHz) as well as future threats up into W-Band (75 to 110 GHz).

Nitrogen-Polar (N-Polar) RF Gallium Nitride (GaN) material demonstrates overmatch performance in mmW applications in comparison to state-of-the-practice (SOTP) RF material presently employed by the DoD and DIB. In order to accelerate adoption by domestic foundries, an onshore, large-diameter material source must demonstrate Technology for Nitrogen-Polar Gallium Nitride: Epiwafers & Substrates (ECLIPSE).

The ECLIPSE Other Transaction Authority (OTA) prototype project is anticipated to be released and to be executed within a 72-month period of performance.