Technology for Nitrogen-Polar Gallium Nitride: Epiwafers & Substrates (ECLIPSE)

Please note: only members with an active DD2345 can access the documentation for ECLIPSE. If you are not a member and wish to submit on this opportunity, please contact membership@nstxl.org and attach a copy of your active DD2345.

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The Office of the Undersecretary of Defense, Research & Engineering (OUSD(R&E))’s Trusted & Assured Microelectronics program is seeking prototypes that (1) mature the manufacturing of 100mm and 150mm N-Polar GaN epiwafers and off-axis semi-insulating SiC substrates, (2) capture foundry requirements for N-Polar GaN transistors and inform N-Polar GaN material maturation specifications, and (3) author and begin execution of N-Polar transistor and MMIC maturation plans. Key program objectives are as follows: (1) ensure repeatability and reproducibility, (2) understand and improve yield, and (3) exercise N-Polar GaN supply chain segments for substrates, epiwafers, and device fabrication.