RNI – SiC HV DEVICES

Thank you for your interest in this opportunity which is now closed. Please note that documentation pertaining to this project is no longer available.

S²MARTS REQUEST FOR NETWORK INSIGHT

To submit on this Request for Network Insight, please email your submission to S2MARTS@nstxl.org. Within the subject line, include the name of the RNI: RNI Submission - SiC HV DEVICES

This S2MARTS announcement is intended to survey U.S. companies in the silicon carbide defense supply chain through NSTXL’s Innovation Network. The objective is to gather information related to the extent that U.S. companies have developed, or are willing to develop, technical and manufacturing capabilities specific to the silicon carbide (SiC) power semiconductor device supply chain, including substrates, epitaxy, device processing steps, packaging, and modules for > 5kV devices; and company plans for future development and sales of such devices for commercial and defense applications. Universities and industry consortia with interest in such programs are also welcome to respond.

For many years, the Department of Defense has been pursuing efforts to develop silicon carbide power electronics and insert this technology into defense systems. The Office of the Under Secretary of Defense for Research and Engineering (OUSD(R&E)), through the Naval Surface Warfare Center, Crane Division (NSWC Crane), Trusted Microelectronics Division (GXV), in tandem with other government agencies, is interested in evaluating the current and possible future technical and manufacturing capabilities of the U.S. silicon carbide power electronics industry in the range of 5 kV to 20+ kV with a view toward informing future government funding decisions.